NPN bipolar junction transistor (BJT) designed for through-hole mounting in a TO-220-3 package. Features a maximum collector current of 2A and a collector-emitter breakdown voltage of 150V, with a collector-base voltage of 200V. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 5MHz. This lead-free, RoHS-compliant component has a maximum power dissipation of 25W and operates across a temperature range of -55°C to 150°C.
Frequency5MHz
PackageTO-220-3
Current Rating2A
MountingThrough Hole
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Technical Specifications
Onsemi KSD401G technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 200V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 5MHz |
| Gain Bandwidth Product | 5MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1200 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 25W |
| RoHS Compliant | Yes |
| Series | KSD401 |
| Transition Frequency | 5MHz |
| DC Rated Voltage | 150V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSD401G Datasheet
Download the complete datasheet for Onsemi KSD401G to view detailed technical specifications.
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