NPN Epitaxial Silicon Darlington Transistor, 1000-TUBE. Features 100V Collector-Emitter Voltage (VCEO) and 5A Continuous Collector Current. Offers a minimum DC current gain (hFE) of 2000. Packaged in a TO-220-3 through-hole mount, this RoHS compliant component operates from -55°C to 150°C.
PackageTO-220-3
Current Rating5A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi KSD560RTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 150V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1.5V |
| Continuous Collector Current | 5A |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 2000 |
| Lead Free | Lead Free |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSD560RTU Datasheet
Download the complete datasheet for Onsemi KSD560RTU to view detailed technical specifications.
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