NPN Bipolar Junction Transistor (BJT) in a TO-220-3 package, designed for through-hole mounting. Features a 60V collector-emitter breakdown voltage and a 5A maximum collector current. Offers a minimum DC current gain (hFE) of 70 at a transition frequency of 20MHz. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 30W. This RoHS compliant component is lead-free.
Frequency20MHz
PackageTO-220-3
Current Rating5A
MountingThrough Hole
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Technical Specifications
Onsemi KSD73YTSTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 2V |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 20MHz |
| Gain Bandwidth Product | 20MHz |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 30W |
| RoHS Compliant | Yes |
| Series | KSD73 |
| Transition Frequency | 20MHz |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSD73YTSTU Datasheet
Download the complete datasheet for Onsemi KSD73YTSTU to view detailed technical specifications.
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