NPN Epitaxial Silicon Transistor, TO-126 package. Features a 3A maximum collector current and 30V collector-emitter voltage (VCEO). Offers a transition frequency of 90MHz and a minimum hFE of 60. Designed for through-hole mounting with a power dissipation of 1W. Operating temperature range from -55°C to 150°C. RoHS compliant and lead-free.
Frequency90MHz
PackageTO-126
Current Rating3A
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi KSD882YSTU technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 90MHz |
| Gain Bandwidth Product | 90MHz |
| Height | 11.2mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 8.3mm |
| Max Collector Current | 3A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 90MHz |
| DC Rated Voltage | 30V |
| Weight | 0.761g |
| Width | 3.45mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSD882YSTU Datasheet
Download the complete datasheet for Onsemi KSD882YSTU to view detailed technical specifications.
No datasheet is available for this part.
Product Images
