PNP Bipolar Junction Transistor (BJT) in a TO-126 package. Features a 40V collector-emitter breakdown voltage and a maximum collector current of 3A. Offers a minimum DC current gain (hFE) of 50 and a transition frequency of 50MHz. Designed for through-hole mounting, this lead-free and RoHS compliant component operates within a temperature range of -65°C to 150°C with a power dissipation of 1.5W.
Frequency50MHz
PackageTO-126
Current Rating-3A
MountingThrough Hole
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Technical Specifications
Onsemi KSE170S technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1.7V |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | -7V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.5W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 250 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 1.5W |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -40V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSE170S Datasheet
Download the complete datasheet for Onsemi KSE170S to view detailed technical specifications.
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