PNP Bipolar Junction Transistor (BJT) in a TO-220-3 package for through-hole mounting. Features a 60V collector-emitter breakdown voltage and a maximum collector current of 10A. Offers a minimum DC current gain (hFE) of 20 and a transition frequency of 2MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 600mW. This component is lead-free and RoHS compliant.
Frequency2MHz
PackageTO-220-3
Current Rating-10A
MountingThrough Hole
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Technical Specifications
Onsemi KSE2955T technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | -70V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 8V |
| Current Rating | -10A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 2MHz |
| Gain Bandwidth Product | 2MHz |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 200 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 600mW |
| RoHS Compliant | Yes |
| Transition Frequency | 2MHz |
| DC Rated Voltage | -60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSE2955T Datasheet
Download the complete datasheet for Onsemi KSE2955T to view detailed technical specifications.
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