NPN bipolar junction transistor in a TO-220-3 package, designed for through-hole mounting. Features a 60V collector-emitter breakdown voltage and a 10A maximum collector current. Offers a minimum DC current gain (hFE) of 20 and a transition frequency of 2MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 600mW. This component is lead-free and RoHS compliant.
Frequency2MHz
PackageTO-220-3
Current Rating10A
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi KSE3055TTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 70V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 8V |
| Current Rating | 10A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 2MHz |
| Gain Bandwidth Product | 2MHz |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 600mW |
| RoHS Compliant | Yes |
| Transition Frequency | 2MHz |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSE3055TTU Datasheet
Download the complete datasheet for Onsemi KSE3055TTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
