
NPN Epitaxial Silicon Transistor, TO-126 package, featuring a 300V Collector-Emitter Breakdown Voltage (VCEO) and 300V Collector Base Voltage (VCBO). This through-hole mounted component offers a continuous collector current rating of 500mA and a maximum power dissipation of 20W. Operating across a wide temperature range from -65°C to 150°C, it boasts a minimum DC current gain (hFE) of 30. The device is RoHS compliant and supplied in a rail/tube package.
Onsemi KSE340STU technical specifications.
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 300V |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 11mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 8mm |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 20W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 20W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| DC Rated Voltage | 300V |
| Weight | 0.761g |
| Width | 3.25mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSE340STU to view detailed technical specifications.
No datasheet is available for this part.
