NPN Epitaxial Silicon Transistor, designed for through-hole mounting in a TO-220 package. Features a maximum collector current of 10A and a collector-emitter voltage of 80V. Offers a minimum DC current gain (hFE) of 60 and a transition frequency of 50MHz. Power dissipation is rated at 50W, with operating temperatures ranging from -55°C to 150°C. This RoHS compliant component is supplied in a tube.
Frequency50MHz
PackageTO-220
Current Rating10A
MountingThrough Hole
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Technical Specifications
Onsemi KSE44H11TU technical specifications.
General
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 10A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| Height | 9.2mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 9.9mm |
| Max Collector Current | 10A |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 80V |
| Weight | 1.8g |
| Width | 4.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSE44H11TU Datasheet
Download the complete datasheet for Onsemi KSE44H11TU to view detailed technical specifications.
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