
PNP Epitaxial Silicon Transistor, TO-220-3 package. Features include a collector-emitter voltage (VCEO) of 80V, collector current rating of 10A, and a transition frequency of 40MHz. This through-hole mounted component offers a minimum hFE of 60 and a maximum power dissipation of 1.67W. Operating temperature range is -55°C to 150°C. RoHS compliant and lead-free.
Onsemi KSE45H11 technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -10A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 40MHz |
| Gain Bandwidth Product | 40MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.67W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 200 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 1.67W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 40MHz |
| DC Rated Voltage | -80V |
| Weight | 1.8g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSE45H11 to view detailed technical specifications.
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