PNP Epitaxial Silicon Transistor, TO-220-3 package, designed for through-hole mounting. Features a maximum collector current of 10A and a collector-emitter voltage of 80V. Offers a minimum DC current gain (hFE) of 60 and a transition frequency of 40MHz. Operates within a temperature range of -55°C to 150°C with a power dissipation of 1.67W. This RoHS compliant component is supplied in a rail/tube package.
Frequency40MHz
PackageTO-220-3
Current Rating-10A
MountingThrough Hole
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Technical Specifications
Onsemi KSE45H11TU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -10A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 40MHz |
| Gain Bandwidth Product | 40MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.67W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 1.67W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 40MHz |
| DC Rated Voltage | -80V |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSE45H11TU Datasheet
Download the complete datasheet for Onsemi KSE45H11TU to view detailed technical specifications.
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