PNP Silicon Bipolar Junction Transistor (BJT) for power applications. Features a 60V Collector Emitter Breakdown Voltage (VCEO) and a 10A Max Collector Current. Operates with a -8A continuous current rating and a 40MHz transition frequency. Housed in a TO-220AB plastic package with 3 pins for through-hole mounting. Offers a minimum DC current gain (hFE) of 60 and a maximum power dissipation of 1.67W. RoHS compliant and lead-free.
Frequency40MHz
PackageTO-220-3
Current Rating-8A
MountingThrough Hole
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Technical Specifications
Onsemi KSE45H8 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -8A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 40MHz |
| Gain Bandwidth Product | 40MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.67W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1200 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 1.67W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | KSE45 |
| Transition Frequency | 40MHz |
| DC Rated Voltage | -60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSE45H8 Datasheet
Download the complete datasheet for Onsemi KSE45H8 to view detailed technical specifications.
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