NPN Bipolar Junction Transistor (BJT) in TO-126 package, featuring a 500V Collector-Emitter Breakdown Voltage and 3A continuous collector current. This through-hole mounted transistor offers a maximum power dissipation of 30W and a transition frequency of 18MHz. It operates across a wide temperature range from -55°C to 150°C and is RoHS compliant and lead-free.
Frequency18MHz
PackageTO-126
Current Rating3A
MountingThrough Hole
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Technical Specifications
Onsemi KSE5020S technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 800V |
| Collector Emitter Breakdown Voltage | 500V |
| Collector Emitter Voltage (VCEO) | 500V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 18MHz |
| Gain Bandwidth Product | 18MHz |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 30W |
| RoHS Compliant | Yes |
| Series | KSE5020 |
| Transition Frequency | 18MHz |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSE5020S Datasheet
Download the complete datasheet for Onsemi KSE5020S to view detailed technical specifications.
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