
PNP Epitaxial Silicon Transistor, 2000-REEL, featuring a DPAK surface mount package. This bipolar junction transistor offers a Collector Emitter Voltage (VCEO) of 25V and a maximum Collector Current of 5A. With a transition frequency of 65MHz and a minimum hFE of 45, it is designed for efficient switching and amplification. Operating across a wide temperature range from -65°C to 150°C, this RoHS compliant component provides a power dissipation of 1.4W.
Onsemi KSH210TF technical specifications.
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | -40V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | -1.8V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 1.8V |
| Current Rating | -5A |
| Emitter Base Voltage (VEBO) | -8V |
| Frequency | 65MHz |
| Gain Bandwidth Product | 65MHz |
| Height | 2.3mm |
| hFE Min | 45 |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 5A |
| Max Frequency | 100kHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 65MHz |
| DC Rated Voltage | -25V |
| Weight | 0.26037g |
| Width | 6.1mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSH210TF to view detailed technical specifications.
No datasheet is available for this part.
