NPN Bipolar Junction Transistor (BJT) in TO-251-3 package. Features a 100V Collector-Emitter Voltage (VCEO) and 1A Max Collector Current. Offers a 700mV Collector-Emitter Saturation Voltage and 3MHz transition frequency. Operates across a -65°C to 150°C temperature range with 1.56W power dissipation. Lead-free and RoHS compliant.
Frequency3MHz
PackageTO-251-3
Current Rating1A
MountingThrough Hole
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Technical Specifications
Onsemi KSH29CITU technical specifications.
General
| Package/Case | TO-251-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5040 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1.56W |
| RoHS Compliant | Yes |
| Series | KSH29 |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSH29CITU Datasheet
Download the complete datasheet for Onsemi KSH29CITU to view detailed technical specifications.
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