NPN Epitaxial Silicon Transistor, designed for surface mount applications in a TO-252-3 package. Features a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current rating of 10A. Offers a minimum DC current gain (hFE) of 20 and a transition frequency of 2MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.75W. This RoHS compliant component is supplied on tape and reel.
Onsemi KSH3055TM technical specifications.
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 70V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 8V |
| Current Rating | -10A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 2MHz |
| Gain Bandwidth Product | 2MHz |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.75W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.75W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 2MHz |
| DC Rated Voltage | -60V |
| Weight | 0.26037g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSH3055TM to view detailed technical specifications.
No datasheet is available for this part.