
PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a -100V Collector Base Voltage (VCBO) and 40V Collector Emitter Voltage (VCEO). Offers a continuous collector current rating of -1A and a maximum power dissipation of 1.56W. Operates across a wide temperature range from -65°C to 150°C. Packaged in a TO-252-3 case, this RoHS compliant component boasts a transition frequency of 3MHz.
Onsemi KSH30TF technical specifications.
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | -100V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -700mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.56W |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -40V |
| Weight | 0.26037g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSH30TF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.