NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 100V collector-emitter voltage and 3A continuous collector current. Housed in a TO-252 (DPAK) plastic package with 3 pins and a tab. Maximum power dissipation is 1560mW. Operating temperature range is -65°C to 150°C.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Onsemi KSH31C technical specifications.
General
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.6
Package Width (mm)
6.1
Package Height (mm)
2.3
Pin Pitch (mm)
2.3
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-252AA
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
100V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
100V
Maximum DC Collector Current
3A
Maximum Power Dissipation
1560mW
Material
Si
Minimum DC Current Gain
25@1A@4V|10@3A@4V
Maximum Transition Frequency
3(Min)MHz
Category
Bipolar Power
Min Operating Temperature
-65°C
Max Operating Temperature
150°C
Compliance
Cage Code
5V1P1
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
Onsemi KSH31C Datasheet
Download the complete datasheet for Onsemi KSH31C to view detailed technical specifications.
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