
NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 40V collector-emitter breakdown voltage and a 3A maximum collector current. Operates with a transition frequency of 3MHz and a minimum hFE of 10. Packaged in a TO-252-3 (DPAK) surface mount package, this component is lead-free and RoHS compliant, with a maximum power dissipation of 1.56W.
Onsemi KSH31TF technical specifications.
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1.2V |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 10 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.56W |
| RoHS Compliant | Yes |
| Series | KSH31 |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 40V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSH31TF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.