
PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 100V collector-emitter voltage and 3A continuous collector current. Packaged in a TO-252 (DPAK) plastic case with 3 pins and a tab, measuring 6.6mm x 6.1mm x 2.3mm. Offers a maximum power dissipation of 1560mW and operates within a temperature range of -65°C to 150°C. Minimum DC current gain is 25 at 1A/4V and 10 at 3A/4V.
Onsemi KSH32C technical specifications.
| Package Family Name | TO-252 |
| Package/Case | DPAK |
| Package Description | Deca Watt Package |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.6 |
| Package Width (mm) | 6.1 |
| Package Height (mm) | 2.3 |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-252AA |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 100V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 100V |
| Maximum DC Collector Current | 3A |
| Maximum Power Dissipation | 1560mW |
| Material | Si |
| Minimum DC Current Gain | 25@1A@4V|10@3A@4V |
| Maximum Transition Frequency | 3(Min)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
Download the complete datasheet for Onsemi KSH32C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.