The KSH350TF is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 300V and a maximum collector current of 500mA. It is packaged in a TO-252-3 surface mount package and is rated for operation up to 150°C. The transistor is lead-free and RoHS compliant. It has a minimum current gain (hFE) of 30 and a maximum power dissipation of 1.56W.
PackageTO-252-3
Current Rating-500mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Onsemi KSH350TF technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | -300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | -300V |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -3V |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 1.56W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.56W |
| RoHS Compliant | Yes |
| DC Rated Voltage | -300V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSH350TF Datasheet
Download the complete datasheet for Onsemi KSH350TF to view detailed technical specifications.
No datasheet is available for this part.