PNP Epitaxial Silicon Transistor for surface mount applications. Features a maximum collector current of 8A and a collector-emitter voltage of 80V. Offers a minimum DC current gain (hFE) of 60 and a transition frequency of 40MHz. Packaged in TO-252-3 on a 2500-piece tape and reel, this RoHS compliant component operates from -55°C to 150°C with a power dissipation of 1.75W.
Onsemi KSH45H11TM technical specifications.
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -8A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 40MHz |
| Gain Bandwidth Product | 40MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.75W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.75W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 40MHz |
| DC Rated Voltage | -80V |
| Weight | 0.26037g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSH45H11TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
