NPN Epitaxial Silicon Transistor for surface mount applications. Features a 250V Collector-Emitter Breakdown Voltage and 1A maximum collector current. Operates with a 10MHz transition frequency and offers a minimum hFE of 30. Packaged in a TO-252-3 case, this lead-free and RoHS compliant component supports a maximum power dissipation of 1.56W.
Frequency10MHz
PackageTO-252-3
Current Rating1A
MountingSurface Mount
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Technical Specifications
Onsemi KSH47TF technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Breakdown Voltage | 250V |
| Collector Emitter Voltage (VCEO) | 250V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 10MHz |
| Gain Bandwidth Product | 10MHz |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 250V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.56W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 10MHz |
| DC Rated Voltage | 250V |
| Weight | 0.26037g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSH47TF Datasheet
Download the complete datasheet for Onsemi KSH47TF to view detailed technical specifications.
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