NPN Epitaxial Silicon Transistor for surface mount applications. Features a 400V Collector-Emitter Breakdown Voltage and 1A Max Collector Current. Offers a 10MHz transition frequency and 30 minimum hFE. Packaged in DPAK for tape and reel deployment, with a maximum power dissipation of 15W. Operates across a wide temperature range from -65°C to 150°C.
Frequency10MHz
PackageDPAK
Current Rating1A
MountingSurface Mount
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Technical Specifications
Onsemi KSH50TF technical specifications.
General
Package/Case
DPAK
Collector Base Voltage (VCBO)
500V
Collector Emitter Breakdown Voltage
400V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
400V
Collector-emitter Voltage-Max
1V
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Frequency
10MHz
Gain Bandwidth Product
10MHz
Height
2.3mm
hFE Min
30
Lead Free
Lead Free
Length
6.6mm
Max Breakdown Voltage
400V
Max Collector Current
1A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
15W
Mount
Surface Mount
Number of Elements
1
Output Power
1.56W
Package Quantity
2000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1.56W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
10MHz
DC Rated Voltage
400V
Weight
0.26037g
Width
6.1mm
Compliance
RoHS
Compliant
Datasheet
Onsemi KSH50TF Datasheet
Download the complete datasheet for Onsemi KSH50TF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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