
NPN bipolar junction transistor in TO-92 package. Features a 60V collector-emitter breakdown voltage (VCEO) and 60V collector-base voltage (VCBO). Offers a maximum collector current of 500mA and a transition frequency of 100MHz. Collector-emitter saturation voltage is 250mV, with a minimum hFE of 50. Operating temperature range from -55°C to 150°C. Through-hole mounting, RoHS compliant.
Onsemi KSP05BU technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 250mV |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 50 |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | KSP05 |
| Transition Frequency | 100MHz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSP05BU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
