
NPN Epitaxial Silicon Transistor for through-hole mounting in a TO-92-3 package. Features a maximum collector-emitter voltage of 80V, a maximum collector current of 500mA, and a minimum DC current gain (hFE) of 50. Operates with a transition frequency of 100MHz and a maximum power dissipation of 625mW. This RoHS compliant component is supplied in an ammo pack with 2000 units.
Onsemi KSP06TA technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Gain Bandwidth Product | 100MHz |
| Height | 4.58mm |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Length | 4.58mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 80V |
| Weight | 0.24g |
| Width | 3.86mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSP06TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
