NPN RF Bipolar Junction Transistor in TO-92 package, featuring a 25V collector-emitter breakdown voltage and a 100mA maximum collector current. Offers a gain bandwidth product of 650MHz and a transition frequency of 650MHz. Designed for through-hole mounting with a maximum power dissipation of 350mW. Operates across a temperature range of -55°C to 150°C and is RoHS compliant.
Frequency100MHz
PackageTO-92-3
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Onsemi KSP10TA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 25V |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 3V |
| Gain Bandwidth Product | 650MHz |
| Height | 4.58mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 4.58mm |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 4mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 650MHz |
| DC Rated Voltage | 25V |
| Weight | 0.24g |
| Width | 3.86mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSP10TA Datasheet
Download the complete datasheet for Onsemi KSP10TA to view detailed technical specifications.
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