NPN Epitaxial Silicon Darlington Transistor, 2000-FNFLD. Features a 30V Collector-Emitter Voltage (VCEO) and 30V Collector Base Voltage (VCBO). Offers a high DC current gain (hFE) of 10000 and a maximum collector current of 500mA. Packaged in a TO-92-3 through-hole mount, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 625mW.
PackageTO-92-3
Current Rating500mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi KSP13TA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 10000 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 125MHz |
| DC Rated Voltage | 30V |
| Weight | 0.24g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSP13TA Datasheet
Download the complete datasheet for Onsemi KSP13TA to view detailed technical specifications.
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