NPN Epitaxial Silicon Transistor, 2000-FNFLD, featuring a 40V Collector-Emitter Voltage (VCEO) and 600mA maximum collector current. This through-hole mounted component offers a minimum DC current gain (hFE) of 100 and a transition frequency of 300MHz. Packaged in a TO-92 case, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 625mW. RoHS compliant and lead-free.
Frequency300MHz
PackageTO-92
Current Rating600mA
MountingThrough Hole
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Technical Specifications
Onsemi KSP2222ATA technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
75V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
1V
Current Rating
600mA
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
4.58mm
hFE Min
100
Lead Free
Lead Free
Length
4.58mm
Max Breakdown Voltage
40V
Max Collector Current
600mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Ammo Pack
Polarity
NPN
Power Dissipation
625mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
300MHz
DC Rated Voltage
40V
Weight
0.24g
Width
3.86mm
Compliance
RoHS
Compliant
Datasheet
Onsemi KSP2222ATA Datasheet
Download the complete datasheet for Onsemi KSP2222ATA to view detailed technical specifications.
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