
PNP Epitaxial Silicon Transistor, 2000-REEL. Features a -60V Collector Base Voltage (VCBO) and 60V Collector Emitter Voltage (VCEO). Offers a maximum collector current of -600mA and a transition frequency of 200MHz. This through-hole component has a minimum hFE of 100 and a maximum power dissipation of 625mW. Packaged in TO-92-3, it operates from -55°C to 150°C and is RoHS compliant.
Onsemi KSP2907ATF technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -1.6V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1.6V |
| Current Rating | -600mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| Height | 4.7mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 4.7mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 600mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | KSP2907 |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -60V |
| Weight | 0.24g |
| Width | 3.93mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSP2907ATF to view detailed technical specifications.
No datasheet is available for this part.
