NPN Epitaxial Silicon Transistor featuring a 200V Collector-Emitter Voltage (VCEO) and 200V Collector Base Voltage (VCBO). This through-hole component offers a maximum collector current of 500mA and a transition frequency of 50MHz. It operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 625mW. The transistor is housed in a TO-92-3 package and is RoHS compliant.
Frequency50MHz
PackageTO-92-3
Current Rating500mA
MountingThrough Hole
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Technical Specifications
Onsemi KSP43TA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 200V |
| Collector Emitter Breakdown Voltage | 200V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 200V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 200V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 200V |
| Weight | 0.24g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSP43TA Datasheet
Download the complete datasheet for Onsemi KSP43TA to view detailed technical specifications.
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