PNP Epitaxial Silicon Transistor for through-hole mounting in a TO-92-3 package. Features a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 500mA. Offers a minimum DC current gain (hFE) of 50 and a transition frequency (fT) of 50MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. This RoHS compliant component is supplied in an ammo pack.
Frequency50MHz
PackageTO-92-3
Current Rating-500mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi KSP55TA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -4V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 500mA |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -60V |
| Weight | 0.24g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSP55TA Datasheet
Download the complete datasheet for Onsemi KSP55TA to view detailed technical specifications.
No datasheet is available for this part.
Product Images
