PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 500mA and a collector-emitter breakdown voltage of 80V. Offers a transition frequency of 50MHz and a minimum hFE of 50. Packaged in TO-92-3 for through-hole mounting, operating from -55°C to 150°C.
Frequency50MHz
PackageTO-92-3
Current Rating-500mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi KSP56TA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 400mV |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Series | KSP56 |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -80V |
| Weight | 0.24g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi KSP56TA Datasheet
Download the complete datasheet for Onsemi KSP56TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.