
NPN Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-92 package. Features a 60V collector-emitter breakdown voltage and a 500mA maximum collector current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 150MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. This RoHS compliant component is supplied in an ammo pack.
Onsemi KSP8098TA technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | KSP8098 |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 60V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSP8098TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
