NPN bipolar junction transistor (BJT) in a TO-92 package, featuring a maximum collector current of 500mA and a collector-emitter breakdown voltage of 80V. This through-hole component offers a transition frequency of 150MHz, a minimum hFE of 100, and a maximum power dissipation of 625mW. Operating across a temperature range of -55°C to 150°C, it is RoHS compliant and lead-free.
Frequency150MHz
PackageTO-92-3
Current Rating500mA
MountingThrough Hole
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Technical Specifications
Onsemi KSP8099TA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Series | KSP8099 |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 80V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSP8099TA Datasheet
Download the complete datasheet for Onsemi KSP8099TA to view detailed technical specifications.
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