PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features an 80V Collector-Emitter Breakdown Voltage (VCEO) and a 500mA Max Collector Current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 150MHz. Operates across a temperature range of -55°C to 150°C with a power dissipation of 625mW. Through-hole mounting and bulk packaging.
Frequency150MHz
PackageTO-92
Current Rating-500mA
MountingThrough Hole
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Technical Specifications
Onsemi KSP8599BU technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | KSP8599 |
| Transition Frequency | 150MHz |
| DC Rated Voltage | -80V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSP8599BU Datasheet
Download the complete datasheet for Onsemi KSP8599BU to view detailed technical specifications.
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