
PNP Epitaxial Silicon Transistor, TO-92 package, featuring a maximum collector current of 500mA and a collector-emitter voltage of 300V. This bipolar junction transistor offers a transition frequency of 50MHz and a minimum hFE of 40. Designed for through-hole mounting, it operates within a temperature range of -55°C to 150°C and boasts a power dissipation of 625mW. The component is lead-free and RoHS compliant.
Onsemi KSP92BU technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -300V |
| Weight | 0.179g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSP92BU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
