PNP Epitaxial Silicon Transistor featuring a 300V Collector-Emitter Voltage (VCEO) and a maximum collector current of 500mA. This bipolar junction transistor operates with a transition frequency of 50MHz and a minimum hFE of 40. Packaged in a TO-92-3 configuration, it supports both through-hole and surface mount assembly and is RoHS compliant. Maximum power dissipation is rated at 625mW, with an operating temperature range of -55°C to 150°C.
Frequency50MHz
PackageTO-92-3
Voltage300V
Current500mA
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Technical Specifications
Onsemi KSP92TA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Current | 500mA |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| Height | 4.58mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 4.58mm |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole, Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| Voltage | 300V |
| DC Rated Voltage | -300V |
| Weight | 0.008466oz |
| Width | 3.86mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSP92TA Datasheet
Download the complete datasheet for Onsemi KSP92TA to view detailed technical specifications.
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