NPN bipolar junction transistor in SOT-23 package. Features a 30V collector-emitter breakdown voltage and a 200mA maximum collector current. Offers a minimum hFE of 50 and a transition frequency of 250MHz. Designed for surface mount applications, this lead-free and RoHS compliant component operates up to 150°C with a 350mW power dissipation.
Onsemi KST4123MTF technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | KST4123 |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KST4123MTF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
