PNP Bipolar Junction Transistor (BJT) for surface mount applications in a SOT-23 package. Features a 30V collector-emitter breakdown voltage and a maximum collector current of 200mA. Offers a minimum DC current gain (hFE) of 50 and a transition frequency of 200MHz. Maximum power dissipation is 350mW, with a maximum operating temperature of 150°C. Lead-free and RoHS compliant.
Frequency200MHz
PackageSOT-23
Current Rating-200mA
MountingSurface Mount
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Technical Specifications
Onsemi KST4125MTF technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | -30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | -200mA |
| Emitter Base Voltage (VEBO) | -4V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 350mW |
| RoHS Compliant | Yes |
| Series | KST4125 |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KST4125MTF Datasheet
Download the complete datasheet for Onsemi KST4125MTF to view detailed technical specifications.
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