PNP Epitaxial Silicon Transistor, SOT-23 package, designed for surface mounting. Features a maximum collector-emitter voltage (VCEO) of 50V and a maximum collector current of 50mA. Offers a minimum DC current gain (hFE) of 250 and a transition frequency of 40MHz. Maximum power dissipation is 350mW, with an operating temperature range up to 150°C. This RoHS compliant component is supplied on a 3000-piece tape and reel.
Onsemi KST5087MTF technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -50mA |
| Emitter Base Voltage (VEBO) | -3V |
| Frequency | 40MHz |
| Gain Bandwidth Product | 40MHz |
| hFE Min | 250 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 40MHz |
| DC Rated Voltage | -50V |
| Weight | 0.03g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KST5087MTF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
