
NPN Bipolar Junction Transistor (BJT) in a SOT-23 surface mount package. Features a maximum collector current of 50mA and a collector-emitter breakdown voltage of 30V. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 50MHz. Maximum power dissipation is 350mW, with a maximum operating temperature of 150°C. Lead-free and RoHS compliant.
Onsemi KST5088MTF technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 35V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 4.5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 300 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 350mW |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KST5088MTF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
