
NPN Bipolar Junction Transistor (BJT) for RF applications, featuring a 900MHz transition frequency and 12V collector-emitter breakdown voltage. This surface mount component offers a continuous collector current of 50mA and a minimum hFE of 25. Designed for high-frequency performance, it operates within a temperature range of -55°C to 150°C and is packaged in a SOT-23 case. The transistor supports a maximum power dissipation of 350mW and is lead-free and RoHS compliant.
Onsemi KST5179MTF technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 12V |
| Continuous Collector Current | 50mA |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 2.5V |
| Frequency | 900MHz |
| Gain | 15dB |
| Gain Bandwidth Product | 900MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Frequency | 900MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 350mW |
| RoHS Compliant | Yes |
| Transition Frequency | 900MHz |
| DC Rated Voltage | 12V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KST5179MTF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
