PNP Epitaxial Silicon Transistor, designed for surface mount applications in a SOT-23 package. Features a collector-emitter voltage (VCEO) of 60V and a maximum collector current of 500mA. Offers a minimum DC current gain (hFE) of 50 and a transition frequency of 50MHz. This RoHS compliant component operates up to 150°C with a power dissipation of 350mW. Packaged on a 3000-piece tape and reel.
Onsemi KST55MTF technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -4V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 350mW |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -60V |
| Weight | 0.03g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KST55MTF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.