PNP Bipolar Junction Transistor (BJT) in SOT-23 surface mount package. Features a 200V Collector-Emitter Breakdown Voltage (VCEO) and a maximum collector current of 500mA. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 50MHz. Operates with a maximum power dissipation of 250mW and a maximum operating temperature of 150°C. This RoHS compliant component is supplied on tape and reel.
Onsemi KST93MTF technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | -200V |
| Collector Emitter Breakdown Voltage | 200V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 200V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 250mW |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -200V |
| Weight | 0.03g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KST93MTF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.