Dual NPN/PNP bipolar junction transistor in a 6-lead SC package. Features a collector-emitter voltage (VCEO) of 40V, maximum collector current of 200mA, and a transition frequency of 250MHz. Offers a minimum DC current gain (hFE) of 40 and a maximum power dissipation of 150mW. Operates across a temperature range of -55°C to 150°C. Packaged in a 3000-unit tape and reel.
Frequency100MHz
PackageSC
Current Rating200mA
PolarityNPN, PNP
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Technical Specifications
Onsemi MBT3946DW1T2G technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 300MHz |
| Height | 1mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 40V |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MBT3946DW1T2G Datasheet
Download the complete datasheet for Onsemi MBT3946DW1T2G to view detailed technical specifications.
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