N-channel enhancement mode silicon power MOSFET featuring 30V drain-source voltage and 2A continuous drain current. This single MOSFET is housed in a 3-pin MCPH lead-frame SMT package with flat leads, measuring 2mm x 1.6mm x 0.88mm (max) with a 0.65mm pin pitch. It offers a maximum drain-source on-resistance of 165 mOhm at 4.5V Vgs and a maximum power dissipation of 1200 mW, operating from -55°C to 150°C.
PackageMCPH
MountingSurface Mount
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Technical Specifications
Onsemi MCH3478-TL-H technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
MCPH
Lead Shape
Flat
Pin Count
3
PCB
3
Package Length (mm)
2
Package Width (mm)
1.6
Package Height (mm)
0.88(Max)
Seated Plane Height (mm)
0.85
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±12V
Maximum Continuous Drain Current
2A
Material
Si
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
130@10VpF
Maximum Power Dissipation
1200mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
5V1P1
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Onsemi MCH3478-TL-H Datasheet
Download the complete datasheet for Onsemi MCH3478-TL-H to view detailed technical specifications.
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