N-channel enhancement mode power MOSFET, silicon, 20V drain-source voltage, 3.5A continuous drain current. Features 64mOhm maximum drain-source resistance at 4.5V Vgs, 2.8nC typical gate charge at 4.5V Vgs, and 260pF typical input capacitance at 10V Vds. Packaged in a 3-pin MCPH lead-frame SMT (SOT family) with flat leads, measuring 2mm x 1.6mm x 0.88mm (max) with a 0.65mm pin pitch. Surface mountable, single element configuration, with a maximum power dissipation of 900mW and an operating temperature range of -55°C to 150°C.
PackageMCPH
MountingSurface Mount
Quick Jump:
Technical Specifications
Onsemi MCH3479-TL-H technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
MCPH
Lead Shape
Flat
Pin Count
3
PCB
3
Package Length (mm)
2
Package Width (mm)
1.6
Package Height (mm)
0.88(Max)
Seated Plane Height (mm)
0.85
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±12V
Maximum Continuous Drain Current
3.5A
Material
Si
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
260@10VpF
Maximum Power Dissipation
900mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
5V1P1
EU RoHS
Yes with Exemption
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Onsemi MCH3479-TL-H Datasheet
Download the complete datasheet for Onsemi MCH3479-TL-H to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.