PNP Bipolar Junction Transistor (BJT) in an SMD/SMT package. Features a maximum collector current of 1.5A and a collector-emitter breakdown voltage of 30V. Offers low collector-emitter saturation voltage of -375mV and a minimum hFE of 200. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1W. This RoHS compliant component is supplied on a 3000-piece tape and reel.
Frequency1MHz
PackageSMD/SMT
PolarityPNP
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Technical Specifications
Onsemi MCH6102-TL-E technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -375mV |
| Collector Emitter Voltage (VCEO) | -375mV |
| Collector-emitter Voltage-Max | 375mV |
| Emitter Base Voltage (VEBO) | -5V |
| Height | 0.83mm |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1.5A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 450MHz |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MCH6102-TL-E Datasheet
Download the complete datasheet for Onsemi MCH6102-TL-E to view detailed technical specifications.
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