
Single P-Channel Power MOSFET featuring a -12V drain-source breakdown voltage and a continuous drain current of 3.5A. Offers a low on-resistance of 70mΩ at a 10V gate-source voltage. Designed for surface-mount applications with a compact SC-88FL / MCPH6 package, measuring 2mm x 1.6mm x 0.85mm. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.5W. This RoHS compliant component is supplied on a 3000-piece tape and reel.
Onsemi MCH6320-TL-E technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | 12V |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 12V |
| Element Configuration | Single |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 0.85mm |
| Input Capacitance | 405pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 8.8ns |
| Width | 1.6mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MCH6320-TL-E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.